Nanya Technology today announced that the company plans to construct a new 12-inch advanced semiconductor fabrication plant with a double-deck cleanroom in Taishan Nanlin Technology Park in New Taipei City with supports by New Taipei City Government and Central Government agencies. The plant will produce DRAM chips with Nanya’s independent developed 10nm class process technologies and will deploy extreme ultraviolet (EUV) lithography technology, with a monthly production capacity of approximately 45,000 wafers. This will provide 2,000 new high-tech jobs while supporting thousands of additional indirect job opportunities. The investment plan will take three phases within seven years. The company expects to break ground in late 2021, targets to complete the construction in 2023 with volume production in 2024, the total investment is approximate NTD 300 billion.
"DRAM has become a critical component for the smart world. In response to the memory chip market growth, Nanya Technology’s investment in advanced semiconductor plant will enhance Nanya’s international competitiveness as Taiwan’s DRAM leader and push Nanya to the next level as a key memory provider for the globe. FPG will fully support this investment for better economic growth and job opportunities for Taiwan.
We appreciate the New Taipei City Government assistance on the company’s new plant construction through investment support express service system, and assistances provided by central government agencies such as the Industrial Development Bureau, Ministry of Economic Affairs(MOEA) and the Department of Investment Services, MOEA. Nanya has been operating smoothly with sound financials and profitability for continuous years. It has achieved independent development on DRAM technology and will further innovate on research and development and cultivate talents in Taiwan to move towards sustainability,” said Nanya Technology’s Chairman, Chia-Chau Wu.
"Nanya Technology has devoted itself in DRAM field for more than 25 years and owns more than 4,600 patents world-wide. In recent years, Nanya has harnessed the power of artificial intelligence (AI) to accelerate innovation development on 10nm class technology and products. In 2020, we successfully developed core cell technology for the 10nm class DRAM process, which enable the capability to offer DDR5, LPDDR5, and high-capacity 16Gb DRAM products in line with future 5G and smart generation development, and plans to begin mass production this year. The new plant investment plan represents our determination on our DRAM core value and commitment to green technology. As we become the best DRAM partner for the smart world,” said Nanya Technology’s President, Dr. Pei-Ing Lee.
Nanya upholds the core value of DRAM and proactively invests in innovation to become the leader of Taiwan’s DRAM and rank No. 4 in the world. The company’s dedication to Environment, Social, and Governance (ESG) areas has resulted in awards and recognitions including the Dow Jones Sustainability Emerging Market Index (DJSI), the CDP Climate Change A List, National Sustainable Development Award, Talent Quality-management System (TTQS) Gold Certificate, FTSE4Good TIP Taiwan ESG Index, Top 5% in the 6th Corporate Governance Evaluation of Taiwan Stock Exchange Corporation, affirming the path to sustainable development. Nanya will continue to put our three strategies; creating value for the future, strengthening partnerships with the stakeholders, and developing positive impacts on society, into practice for promoting a sustainable business while enhancing international competitiveness.