2005/04/28
Apr. 28, 2005, Taoyuan/Taiwan – Inotera Memories Inc., a joint venture by Nanya Technology and Infineon Technologies AG, today reported its financial result of Q1 2005. Net income in the first quarter of 2005 was NTD 1,764 million compared to NTD 901 million for the whole year 2004. Since April 15 2005, Inotera has been listed at the Board of Emerging Stocks of the Gre Tai Securities Market in Taiwan. To further expand operations, groundbreaking for the shell of a second fab is scheduled in May 2005.
Inotera started its main operating activities in June 2004. The company’s state-of-the art 300mm semiconductor DRAM fab has finalized its first ramp-up phase to 24,000 wafer starts per month in October 2004, two months ahead of schedule, and is expected to reach a capacity of 54,000 wafers per month by the end of 2005. The ramp-up has been based on Infineon’s 110nm trench technology and has beaten expectations in speed and yield improvement since Inotera started its first wafer in March, 2004. Inotera is also planning to transfer into 90nm technology manufacturing starting from Q3, 2005.
“We are very happy to announce that Inotera has achieved outstanding financial results in Q1 2005 and year 2004,” says Charles Kau, President of Inotera Memories Inc. “With the cooperation of Nanya and Infineon, Inotera sets a new benchmark of manufacturing ramp as well as cost efficiency in the global DRAM industry. Inotera is dedicated to the continuous improvement of state-of-the-art manufacturing technologies and processes enabling the production of high quality products at low cost with a high degree of flexibility.”
Karlheinz Horninger, Executive Vice President of Inotera Memories Inc. adds, “We are very proud of Inotera’s performance in every aspect up to now. With the listing at the GreTai Market, Inotera takes more social responsibility for its shareholders and employees. Hence, we are fully committed and target to make Inotera the largest DRAM facility worldwide by the end of 2005. The unique combination of Nanya’s manufacturing expertise together with Infineon’s know-how in 300mm production and both companies’ capability and dedication towards efficient cost reduction are well reflected in Inotera’s performance.”
The Board of Inotera has agreed to start the construction of the shell of a second fab for 300mm DRAM production next to the existing manufacturing facility in Taoyuan County, with groundbreaking in May 2005 and construction completion by the end of 2006. The ramp-up will depend on future market conditions. The shell construction and the land procurement are expected to be funded by the company through its own means without the need for additional equity or financial guarantees from the parent companies. The construction of the shell allows a flexible capacity extension of Inotera to further improve its economies of scale and competitiveness.
Inotera Memories Inc., located in Taoyuan County, Taiwan, was founded in 2002 as a 50:50 joint venture partnership by Nanya Technology Corporation and Infineon Technologies AG. Inotera will focus on the production of DRAM products based on advanced trench technology. Processing of wafers started in April 2004. This collaboration combines the expertise of Nanya Technologies in mass production and efficient cost reduction capability with Infineon’s world-class technology in 300mm wafer production. For more information please visit: http://www.inotera.com